I. Gallium-oxide-based thin films & devices
- Hsin-Yu Chou, Jung-Lung Chiang, Chang-Tze Ricky Yuc, Jo-Mei Maureen Chen, Dong-Sing Wuu* (2023, Jan). Sensing property of Ga2O3-based extended-gate field-effect transistors for a living cellviability sensor. Sensors and Actuators A: Physical, Volume 349, 114071.
- Ray-Hua Horng*, Dong-Sing Wuu*, Po-Liang Liu, Apoorva Sood, Fu-Gow Tarntair, Yu-Hsuan Chen, Singh Jitendra Pratap, Ching-Lien Hsiao (2022, Nov). Growth mechanism and characteristics of beta-Ga2O3 heteroepitaxailly grown on sapphire by metalorganic chemical vapor deposition. Materials Today Advances, 16 (2022) 100320
- Jung-Lung Chiang, Yi-Guo Shang, Bharath Kumar Yadlapalli, Fei-Peng Yu, Dong-Sing Wuu* (2021, Dec). Ga2O3 nanorod-based extended-gate field-effect transistors for pH Sensing. Mater. Sci & Engineer B, 276, 115542, 1-8 pages.
- Chao-Chun Yen, Tsun-Min Huang, Po-Wei Chen, Kai-Ping Chang, Wan-Yu Wu, Dong-Sing Wuu* (2021, Oct). Role of interfacial oxide in the preferred orientation of Ga2O3 on Si for deep Ultraviolet Photodetectors. ACS Omega, 6 (43), pp. 29149-29156.
- Hui Li, Shuo-Huang Yuan, Tsun-Min Huang, Hsuan-Jen Chen, Fu-Hsing Lu, Sam Zhang, Dong-Sing Wuu* (2020, May). Impact of thermal-induced sapphire substrate erosion on material and photodetector characteristics of sputtered Ga2O3 films. J. Alloy. Compd., 823, Article No.153755 (1-7 pages).
- Hui Li, Po-Wei Chen, Shuo-Huang Yuan, Tsun-Min Huang, Sam Zhang, Dong- Sing Wuu* (2019, Dec). Improved performance of deep ultraviolet photodetector from sputtered Ga2O3 films using post-thermal treatments. IEEE Photonics J., 11(6), Article No. 2201308 (9 pages).
- Po-Wei Chen, Shiau-Yuan Huang, Chao-Chun Wang, Shuo-Huang Yuan, Dong-Sing Wuu* (2019, Jun). Influence of oxygen on sputtering of aluminum-gallium oxide films for deep-ultraviolet detector applications. J. Alloy. Compd., 791, 1213-1219.
- Shuo-Huang Yuan. Sin-Liang Ou, Shiau-Yuan Huang, Dong-Sing Wuu* (2019, May). Enhanced deep-ultraviolet responsivity in aluminum-gallium oxide photodetectors via structure deformation by high-oxygen-pressure pulsed laser deposition. ACS Appl. Mater. Interfaces, 11(19), 17563-17569.
- Shuo-Huang Yuan, Sin-Liang Ou, Chien-Ming Chen, Shiau-Yuan Huang, Bo-Wen Hsiao, Dong-Sing Wuu* (2019, Jan). Characterization of aluminum gallium oxide films grown by pulsed laser deposition. Ceram. Int., 45(1), pp. 702-707.
- Shuo-Huang Yuan, Chao-Chun Wang, Shiau-Yuan Huang, Dong-Sing Wuu* (2018, Feb). Improved responsivity drop from 250 to 200 nm in sputtered gallium oxide photodetectors by incorporating trace aluminum. IEEE Electron. Device. Lett., 39(2), pp. 220-223.
- Fei-Peng Yu, Sin-Liang Ou, and Dong-Sing Wuu* (2015, Apr). Pulsed laser deposition of gallium oxide films for high performance solar-blind detectors. Opt. Mater. Express, 5(5), pp. 1240-1249.
- Chiung-Yi Huang, Ray-Hua Horng, Dong-Sing Wuu, Li-Wei Tu, and Hsiang-Shun Kao (2013, Jan). Thermal annealing effect on material characterizations of b-Ga2O3 epilayer grown by metal organic chemical vapor deposition. Appl. Phys. Lett., 102(1), 011119.
- Sin-Liang Ou, Dong-Sing Wuu*, Yu-Chuan Fu, Shu-Ping Liu, Ray-Hua Horng, Lei Liu, Zhe-Chuan Feng (2012, Apr). Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition. Mater. Chem. Phys. 133(2-3), pp. 700-705.
II. Zinc-Gallium-oxide-based thin films & devices
- Anoop Kumar Singh, Chao-Chun Yen, Dong-Sing Wuu* (2022, Jul). Influence of Al doping on crystal structure, optical, and photoluminescence characteristics of ZnGa2O4 films. Materials Science in Semiconductor Processing, vol. 150, 106962.
- Chao-Chun Yen, Anoop Kumar Singh, Hsun Chang, Kai-Ping Chang, Po-Wei Chen, Po-Liang Liu, Dong-Sing Wuu* (2022, May). Pulsed laser deposition grown non-stoichiometry transferred ZnGa2O4 films for deep-ultraviolet applications. Appl. Surf. Sci. vol. 597, 153700.
- Anoop Kumar Singh, Chao-Chun Yen, and Dong-Sing Wuu* (2022, Jan). Structural and photodetector characteristics of Zn and Al incorporated ZnGa2O4 films via co-sputtering. Results in Physics, vol. 33, 105206.
- Anoop Kumar Singh, Shiau-Yuan Huang, Po-Wei Chen, Jung-Lung Chiang, Dong-Sing Wuu* (2021, Sep). The effect of annealing ambience on the material and photodetector characteristics of Sputtered ZnGa2O4 Films, Nanomaterials, 11(9), Article No. 2316.
- Anoop Kumar Singh, Po-Wei Chen, Dong-Sing Wuu* (2021, Nov). Growth and characterization of co-sputtered Al-doped ZnGa2O4 films for enhancing deep-ultraviolet photoresponse. Appl. Surf. Sci. 566, Article No. 150714.
III. Zinc-oxide- & Titanium-oxide-based thin films & devices
- Wu-Chang Peng, Yao-Ching Chen, Ju-Liang He, Sin-Liang Ou, Ray-Hua Horng, Dong-Sing Wuu* (2018, Jun). Tunability of p- and n-channel TiOx thin film transistors. Scientific Reports, 8, 9255.
- Dong-Sing Wuu*, Sin-Liang Ou, Ching-Ho Tien (2018, Mar). Slow electron making more efficient radiation emission. Scientific Reports, 8, 4865.
- Ming-Chun Tseng, Dong-Sing Wuu, Chi-Lu Chen, Hsin-Ying Lee, Ray-Hua Horng (2018, Feb). Zinc oxide-based current spreading layer behavior on the performance of P-side-up thin-film red light emitting diodes. Appl. Surf. Sci., 432, pp. 196-201.
- Sin-Liang Ou, Fei-Peng Yu, Dong-Sing Wuu* (2017, Oct). Transformation from film to nanorod via a sacrifical layer: pulsed laser deposition of ZnO for enhancing photodetector performance. Scientific Reports, 7, 14251.
- Jung-Jie Huang, Che-Chun Lin, Dong-Sing Wuu (2017, Jun). Antireflection and passivation property of titanium oxide thin film on silicon nanowire by liquid phase deposition. Surf. Coat. Tech., 320, pp. 252-258.
- Wu-Chang Peng, Ying-Hung Chen, Jing-Yu Chen, Ju-Liang He, Dong-Sing Wuu* (2017, Apr). High power impulse magnetron sputtered p-type gamma-titanium monoxide films: Effects of substrate bias and post-annealing on microstructure characteristics and optoelectrical properties. Mat. Sci. Semicon. Proc., 61, pp. 85-92.
- Hong-Ru Liu, Sin-Liang Ou, Shih-Yin Wang, and Dong-Sing Wuu* (2016, Jul). On the role of diluted magnetic cobalt-doped ZnO electrodes in efficiency improvement of InGaN light emitters. Appl. Phys. Lett., 109(2), 021110.
- Sin-Liang Ou, Hong-Ru Liu, Shih-Yin Wang, Dong-Sing Wuu* (2016, Jan). Co-doped ZnO dilute magnetic semiconductor thin films by pulsed laser deposition: excellent transmittance, low resistivity and high mobility. J. Alloy. Compd., 663C, pp. 107-115.
- Shih-Hao Chuang, Cheng-Sheng Tsung, Ching-Ho Chen, Sin-Liang Ou, Ray-Hua Horng, Cheng-Yi Lin, and Dong-Sing Wuu* (2015, Jan). Transparent conductive oxide films embedded with plasmonic nanostructure for LED applications. ACS Appl. Mater. Inter., 7(4), pp. 2546-2553.
IV. GaN-based epitaxy & LED devices
- Tzu-Yu Wang, Jia-Hao Liang, Guan-Wei Fua, Dong-Sing Wuu*, “Defect annihilation mechanism of AlN buffer structures with alternating high and low V/III ratios grown by MOCVD,” CrystEngComm, 18, 9152–9159 (2016).
- Po-Jung Lin, Shih-Yung Huang, Wei-Kai Wang, Che-Lin Chen, Bu-Chin Chung, Dong-Sing Wuu*, “Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice,” Appl. Surf. Sci., 362, 434-440 (2016).
- Tzu-Yu Wang, Jia-Hao Liang and Dong-Sing Wuu*, “Defect formation mechanism and quality improvement of InAlN epilayers grown by metal–organic chemical vapor deposition,” CrystEngComm, 17(44), 8505-8511 (2015).
- Tzu-Yu Wang, Jia-Hao Liang, Sin-Liang Ou, and Dong-Sing Wuu*, “Analysis of the thickness effect of undoped electron-blocking layer in ultraviolet LEDs,” IEEE Trans. on Electron Device, 61(11), 3790-3795 (2014).
- Wen-Yu Lin, Tzu-Yu Wang, Sin-Liang Ou, Jia-Hao Liang, and Dong-Sing Wuu*, “Improved performance of 365 nm LEDs by inserting an un-doped electron-blocking layer,” IEEE Electron Device Lett., 35(4), 467-469 (2014).
- Kun-Ching Shen, Wen-Yu Lin, Dong-Sing Wuu*, Shih-Yung Huang, Kuo-Sheng Wen, Shih-Feng Pai, Liang-Wen Wu, and Ray-Hua Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett., 34(2), 274-276 (2013).
- Shih-Cheng Huang, Kun-Ching Shen, Dong-Sing Wuu*, Po-Min Tu, Hao-Chung Kuo, Chia-Cheng Tu, and Ray-Hua Horng, “Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency and device performance,” J. Appl. Phys., 110, 123102 (2011).
- Tsung-Yen Tsai, Dong-Sing Wuu*, Ming-Tsung Hung, Jen-Hung Tu, Shih-Cheng Huang, Ray-Hua Horng, Wei-Yang Chiang, and Li-Wei Tu, “Power enhancement of 410-nm InGaN-based light-emitting diodes on selectively etched GaN/sapphire templates, “IEEE Trans. Electron Devices, 58(11), 3962-3969 (2011).
V. LED晶粒與微型顯示器製程開發
- Kai-Ping Chang , Po-Chun Lien, Chao-Chun Yen, Po-Wei Chen, Ray-Hua Horng, Dong-Sing Wuu*, ”High performance AlGaInP-Based micro-LED displays with novel pixel structures,” IEEE Photonics Technol. Lett., 33(24),1375-1378 (2021).
- Kai-Ping Chang, Yu-Tin Tsai, Chao-Chun Yen, Ray-Hua Horng, Dong-Sing Wuu*, “Structural design and performance improvement of flip-chip AlGaInP mini light-emitting diodes,” Semiconductor Sci. Technol., 36, 095008 (2021).
- Kai-Ping Chang, Jhih-Yuan Jheng, Shih-Yung Huang, Wei-Kai Wang, Ray-Hua Horng, Dong-Sing Wuu* (2020, Oct). Improvement of p-electrode structures for 280 nm AlGaN LED applications. Semiconductor Sci. Technol., 35 (10), 105023 (2020).
- Po-Wei Chen, Po-Wen Hsiao, Po-Chen Shen, Hsuan-Jen Chen, Yi-An Chen, Ray-Hua Horng, Dong-Sing Wuu*, “Improved pPerformance of pssive-matrix micro-LED displays using a multi-function passivation structure,” IEEE Photonics J., 12 (4), 7000711 (2020).
- Shou-Huang Yuan, Shih-Siang Yan, Yu-Shiuan Yao, Chung-Cheng Wu, Ray-Hua Horng, Dong-Sing Wuu*, “Process integration and interconnection design of passive-matrix LED micro-displays with 256 pixel-per-inch resolution,” IEEE J. Electron Devices Soc., 8, 251-255 (2020).
- Dong-Sing Wuu*, Sin-Liang Ou, Ching-Ho Tien, ”Slow electron making more efficient radiation emission,” Sci. Rep., 8, 4865 (2018).
- Ching-Ho Tien, Sin-Liang Ou, Yi OuYang, Chien-Ming Chen, and Dong-Sing Wuu*, “A low-temperature external electron retarding electrode for improving vertical green LED performance,” IEEE Trans. Electron Devices, 64 (8), 3219-3225 (2017).
- Ping -Chen Wu, Sin-Liang Ou, Ray-Hua Horng, and Dong-Sing Wuu*, “Enhanced light extraction of high-voltage light emitting diodes using a sidewall chamfer structure,” IEEE Photonics Journal, 9(3), 8201409 (2017).
- Ping-Chen Wu, Sin-Liang Ou, Ray-Hua Horng, and Dong-Sing Wuu*, “Improved performance of high-voltage vertical GaN LEDs via modification of micro-cell geometry,” Appl. Sci., 7, 506 (2017).
- Ching-Ho Tien, Chen-Hao Kuo, Dong-Sing Wuu*, Ray-Hua Horng, “Improved optoelectronic performance of high-voltage ultraviolet light-emitting diodes through electrode designs. IEEE Trans. Electron Devices, 64 (11), 4526-4531 (2017).
- Ching-Ho Tien, Shih-Hao Chuang, Huan-Min Lo, Stone Tasi, Chang-Lu Wu, Sin-Liang Ou, Dong-Sing Wuu*, “ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes,” Phys. Status Solidi A-Appl. Mat., 214 (3), 1600609 (2017).
- Ming-Chun Tseng, Dong-Sing Wuu, Chi-Lu Chen, Hsin-Ying Lee, Yu-Chang Lin, Ray-Hua Horng, “Enhanced light extraction in wafer-bonded p-side-up thin-film AlGaInP light emitting diodes via zinc oxide nanorods,” Opt. Mater. Express, 10, 3293-3302 (2016).
- Hong-Ru Liu, Sin-Liang Ou, Shih-Yin Wang, and Dong-Sing Wuu*, “On the role of diluted magnetic cobalt-doped ZnO electrodes in efficiency improvement of InGaN light emitters,” Appl. Phys. Lett., 109(2), 021110-1~021110-5 (2016).
- Shih-Hao Chuang, Cheng-Sheng Tsung, Ching-Ho Chen, Sin-Liang Ou, Ray-Hua Horng, Cheng-Yi Lin, and Dong-Sing Wuu*, “Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications,” ACS Appl. Mater. Interfaces, 7(4), 2546-2553 (2015).