A. 研究領域代表性論文 (Selected SCI Papers)

 

I. Gallium-oxide-based thin films & devices

  1. Hsin-Yu Chou, Jung-Lung Chiang, Chang-Tze Ricky Yuc, Jo-Mei Maureen Chen, Dong-Sing Wuu* (2023, Jan). Sensing property of Ga2O3-based extended-gate field-effect transistors for a living cellviability sensor. Sensors and Actuators A: Physical, Volume 349, 114071.
  2. Ray-Hua Horng*, Dong-Sing Wuu*, Po-Liang Liu, Apoorva Sood, Fu-Gow Tarntair, Yu-Hsuan Chen, Singh Jitendra Pratap, Ching-Lien Hsiao (2022, Nov). Growth mechanism and characteristics of beta-Ga2O3 heteroepitaxailly grown on sapphire by metalorganic chemical vapor deposition. Materials Today Advances, 16 (2022) 100320
  3. Jung-Lung Chiang, Yi-Guo Shang, Bharath Kumar Yadlapalli, Fei-Peng Yu, Dong-Sing Wuu* (2021, Dec). Ga2O3 nanorod-based extended-gate field-effect transistors for pH Sensing. Mater. Sci & Engineer B, 276, 115542, 1-8 pages.
  4. Chao-Chun Yen, Tsun-Min Huang, Po-Wei Chen, Kai-Ping Chang, Wan-Yu Wu, Dong-Sing Wuu* (2021, Oct). Role of interfacial oxide in the preferred orientation of Ga2O3 on Si for deep Ultraviolet Photodetectors. ACS Omega, 6 (43), pp. 29149-29156.
  5. Hui Li, Shuo-Huang Yuan, Tsun-Min Huang, Hsuan-Jen Chen, Fu-Hsing Lu, Sam Zhang, Dong-Sing Wuu* (2020, May). Impact of thermal-induced sapphire substrate erosion on material and photodetector characteristics of sputtered Ga2O3 films. J. Alloy. Compd., 823, Article No.153755 (1-7 pages).
  6. Hui Li, Po-Wei Chen, Shuo-Huang Yuan, Tsun-Min Huang, Sam Zhang, Dong- Sing Wuu* (2019, Dec). Improved performance of deep ultraviolet photodetector from sputtered Ga2O3 films using post-thermal treatments. IEEE Photonics J., 11(6), Article No. 2201308 (9 pages).
  7. Po-Wei Chen, Shiau-Yuan Huang, Chao-Chun Wang, Shuo-Huang Yuan, Dong-Sing Wuu* (2019, Jun). Influence of oxygen on sputtering of aluminum-gallium oxide films for deep-ultraviolet detector applications. J. Alloy. Compd., 791, 1213-1219.
  8. Shuo-Huang Yuan. Sin-Liang Ou, Shiau-Yuan Huang, Dong-Sing Wuu* (2019, May). Enhanced deep-ultraviolet responsivity in aluminum-gallium oxide photodetectors via structure deformation by high-oxygen-pressure pulsed laser deposition. ACS Appl. Mater. Interfaces, 11(19), 17563-17569.
  9. Shuo-Huang Yuan, Sin-Liang Ou, Chien-Ming Chen, Shiau-Yuan Huang, Bo-Wen Hsiao, Dong-Sing Wuu* (2019, Jan). Characterization of aluminum gallium oxide films grown by pulsed laser deposition. Ceram. Int., 45(1), pp. 702-707.
  10. Shuo-Huang Yuan, Chao-Chun Wang, Shiau-Yuan Huang, Dong-Sing Wuu* (2018, Feb). Improved responsivity drop from 250 to 200 nm in sputtered gallium oxide photodetectors by incorporating trace aluminum. IEEE Electron. Device. Lett., 39(2), pp. 220-223.
  11. Fei-Peng Yu, Sin-Liang Ou, and Dong-Sing Wuu* (2015, Apr). Pulsed laser deposition of gallium oxide films for high performance solar-blind detectors. Opt. Mater. Express, 5(5), pp. 1240-1249.
  12. Chiung-Yi Huang, Ray-Hua Horng, Dong-Sing Wuu, Li-Wei Tu, and Hsiang-Shun Kao (2013, Jan). Thermal annealing effect on material characterizations of b-Ga2O3 epilayer grown by metal organic chemical vapor deposition. Appl. Phys. Lett., 102(1), 011119.
  13. Sin-Liang Ou, Dong-Sing Wuu*, Yu-Chuan Fu, Shu-Ping Liu, Ray-Hua Horng, Lei Liu, Zhe-Chuan Feng (2012, Apr). Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition. Mater. Chem. Phys. 133(2-3), pp. 700-705.
II. Zinc-Gallium-oxide-based thin films & devices
  1. Anoop Kumar Singh, Chao-Chun Yen, Dong-Sing Wuu* (2022, Jul). Influence of Al doping on crystal structure, optical, and photoluminescence characteristics of ZnGa2O4 films. Materials Science in Semiconductor Processing, vol. 150, 106962.
  2. Chao-Chun Yen, Anoop Kumar Singh, Hsun Chang, Kai-Ping Chang, Po-Wei Chen, Po-Liang Liu, Dong-Sing Wuu* (2022, May). Pulsed laser deposition grown non-stoichiometry transferred ZnGa2O4 films for deep-ultraviolet applications. Appl. Surf. Sci. vol. 597, 153700.
  3. Anoop Kumar Singh, Chao-Chun Yen, and Dong-Sing Wuu* (2022, Jan). Structural and photodetector characteristics of Zn and Al incorporated ZnGa2O4 films via co-sputtering. Results in Physics, vol. 33, 105206.
  4. Anoop Kumar Singh, Shiau-Yuan Huang, Po-Wei Chen, Jung-Lung Chiang, Dong-Sing Wuu* (2021, Sep). The effect of annealing ambience on the material and photodetector characteristics of Sputtered ZnGa2O4 Films, Nanomaterials, 11(9), Article No. 2316.
  5. Anoop Kumar Singh, Po-Wei Chen, Dong-Sing Wuu* (2021, Nov). Growth and characterization of co-sputtered Al-doped ZnGa2O4 films for enhancing deep-ultraviolet photoresponse. Appl. Surf. Sci. 566, Article No. 150714.

   III. Zinc-oxide- & Titanium-oxide-based thin films & devices

  1. Wu-Chang Peng, Yao-Ching Chen, Ju-Liang He, Sin-Liang Ou, Ray-Hua Horng, Dong-Sing Wuu* (2018, Jun). Tunability of p- and n-channel TiOx thin film transistors. Scientific Reports, 8, 9255.
  2. Dong-Sing Wuu*, Sin-Liang Ou, Ching-Ho Tien (2018, Mar). Slow electron making more efficient radiation emission. Scientific Reports, 8, 4865.
  3. Ming-Chun Tseng, Dong-Sing Wuu, Chi-Lu Chen, Hsin-Ying Lee, Ray-Hua Horng (2018, Feb). Zinc oxide-based current spreading layer behavior on the performance of P-side-up thin-film red light emitting diodes. Appl. Surf. Sci., 432, pp. 196-201.
  4. Sin-Liang Ou, Fei-Peng Yu, Dong-Sing Wuu* (2017, Oct). Transformation from film to nanorod via a sacrifical layer: pulsed laser deposition of ZnO for enhancing photodetector performance. Scientific Reports, 7, 14251.
  5. Jung-Jie Huang, Che-Chun Lin, Dong-Sing Wuu (2017, Jun). Antireflection and passivation property of titanium oxide thin film on silicon nanowire by liquid phase deposition. Surf. Coat. Tech., 320, pp. 252-258.
  6. Wu-Chang Peng, Ying-Hung Chen, Jing-Yu Chen, Ju-Liang He, Dong-Sing Wuu* (2017, Apr). High power impulse magnetron sputtered p-type gamma-titanium monoxide films: Effects of substrate bias and post-annealing on microstructure characteristics and optoelectrical properties. Mat. Sci. Semicon. Proc., 61, pp. 85-92.
  7. Hong-Ru Liu, Sin-Liang Ou, Shih-Yin Wang, and Dong-Sing Wuu* (2016, Jul). On the role of diluted magnetic cobalt-doped ZnO electrodes in efficiency improvement of InGaN light emitters. Appl. Phys. Lett., 109(2), 021110.
  8. Sin-Liang Ou, Hong-Ru Liu, Shih-Yin Wang, Dong-Sing Wuu* (2016, Jan). Co-doped ZnO dilute magnetic semiconductor thin films by pulsed laser deposition: excellent transmittance, low resistivity and high mobility. J. Alloy. Compd., 663C, pp. 107-115.
  9. Shih-Hao Chuang, Cheng-Sheng Tsung, Ching-Ho Chen, Sin-Liang Ou, Ray-Hua Horng, Cheng-Yi Lin, and Dong-Sing Wuu* (2015, Jan). Transparent conductive oxide films embedded with plasmonic nanostructure for LED applications. ACS Appl. Mater. Inter., 7(4), pp. 2546-2553.
IV. GaN-based epitaxy & LED devices
  1. Po-Wei Chen, Po-Wen Hsiao, Hsuan-Jen Chen, Bo-Sheng Lee, Kai-Ping Chang, Chao-Chun Yen, Ray-Hua Horng, and Dong-Sing Wuu*, “On the mechanism of carrier recombination in downsized blue micro-LEDs,” Scientific Reports, 11(1), 22788 (2021)
  2. Kai-Ping Chang, Po-Jung Lin, Ray-Hua Horng, Dong-Sing Wuu*,”Growth characteristics of Fe-doped GaN epilayers on SiC (001) substrates and their effects on high breakdown voltage devices,” Mater. Sci. in Semiconductor Processing, 119, 105228 (2020).
  3. Yao Li, Chi Zhang, Xuguang Luo, Yuanlan Liang, Dong-Sing Wuu, Chin-Che Tin, Xiang Lu, Kaiyan He, Lingyu Wan, Zhe Chuan Feng, “Surface, structural and optical properties of AlN thin films grown on different face sapphire substrates by metalorganic chemical vapor deposition,” Appl. Surf. Sci., 458, pp. 972-977 (2018).
  4. Tzu-Yu Wang, Chi-Tsung Tasi, Ku-Yen Lin, Sin-Liang Ou, Ray-Hua Horng, Dong-Sing Wuu*, “Surface evolution and effect of V/III ratio modulation on etch-pit-density improvement of thin AlN templates on nano-patterned sapphire substrates by metalorganic chemical vapor deposition,” Appl. Surf. Sci., 455, pp. 1123-1130 (2018).
  5. Tzu-Yu Wang, Chi-Tsung Tasi, Chia-Feng Lin, Dong-Sing Wuu*, “85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering,” Scientific Reports, 7, 14422 (2017).
  6. Tzu-Yu Wang, Jia-Hao Liang, Guan-Wei Fua, Dong-Sing Wuu*, “Defect annihilation mechanism of AlN buffer structures with alternating high and low V/III ratios grown by MOCVD,” CrystEngComm, 18, 9152–9159 (2016).
  7. Po-Jung Lin, Shih-Yung Huang, Wei-Kai Wang, Che-Lin Chen, Bu-Chin Chung, Dong-Sing Wuu*, “Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice,” Appl. Surf. Sci., 362, 434-440 (2016).
  8. Tzu-Yu Wang, Jia-Hao Liang and Dong-Sing Wuu*, “Defect formation mechanism and quality improvement of InAlN epilayers grown by metal–organic chemical vapor deposition,” CrystEngComm, 17(44), 8505-8511 (2015).
  9. Tzu-Yu Wang, Jia-Hao Liang, Sin-Liang Ou, and Dong-Sing Wuu*, “Analysis of the thickness effect of undoped electron-blocking layer in ultraviolet LEDs,” IEEE Trans. on Electron Device, 61(11), 3790-3795 (2014).
  10. Wen-Yu Lin, Tzu-Yu Wang, Sin-Liang Ou, Jia-Hao Liang, and Dong-Sing Wuu*, “Improved performance of 365 nm LEDs by inserting an un-doped electron-blocking layer,” IEEE Electron Device Lett., 35(4), 467-469 (2014).
  11. Kun-Ching Shen, Wen-Yu Lin, Dong-Sing Wuu*, Shih-Yung Huang, Kuo-Sheng Wen, Shih-Feng Pai, Liang-Wen Wu, and Ray-Hua Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett., 34(2), 274-276 (2013).
  12. Shih-Cheng Huang, Kun-Ching Shen, Dong-Sing Wuu*, Po-Min Tu, Hao-Chung Kuo, Chia-Cheng Tu, and Ray-Hua Horng, “Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency and device performance,” J. Appl. Phys., 110, 123102 (2011).
  13. Tsung-Yen Tsai, Dong-Sing Wuu*, Ming-Tsung Hung, Jen-Hung Tu, Shih-Cheng Huang, Ray-Hua Horng, Wei-Yang Chiang, and Li-Wei Tu, “Power enhancement of 410-nm InGaN-based light-emitting diodes on selectively etched GaN/sapphire templates, “IEEE Trans. Electron Devices, 58(11), 3962-3969 (2011).
V. LED晶粒與微型顯示器製程開發
  1. Kai-Ping Chang , Po-Chun Lien, Chao-Chun Yen, Po-Wei Chen, Ray-Hua Horng, Dong-Sing Wuu*, ”High performance AlGaInP-Based micro-LED displays with novel pixel structures,” IEEE Photonics Technol. Lett., 33(24),1375-1378 (2021).
  2. Kai-Ping Chang, Yu-Tin Tsai, Chao-Chun Yen, Ray-Hua Horng, Dong-Sing Wuu*, “Structural design and performance improvement of flip-chip AlGaInP mini light-emitting diodes,” Semiconductor Sci. Technol., 36, 095008 (2021).
  3. Kai-Ping Chang, Jhih-Yuan Jheng, Shih-Yung Huang, Wei-Kai Wang, Ray-Hua Horng, Dong-Sing Wuu* (2020, Oct). Improvement of p-electrode structures for 280 nm AlGaN LED applications. Semiconductor Sci. Technol., 35 (10), 105023 (2020).
  4. Po-Wei Chen, Po-Wen Hsiao, Po-Chen Shen, Hsuan-Jen Chen, Yi-An Chen, Ray-Hua Horng, Dong-Sing Wuu*, “Improved pPerformance of pssive-matrix micro-LED displays using a multi-function passivation structure,” IEEE Photonics J., 12 (4), 7000711 (2020).
  5. Shou-Huang Yuan, Shih-Siang Yan, Yu-Shiuan Yao, Chung-Cheng Wu, Ray-Hua Horng, Dong-Sing Wuu*, “Process integration and interconnection design of passive-matrix LED micro-displays with 256 pixel-per-inch resolution,” IEEE J. Electron Devices Soc., 8, 251-255 (2020).
  6. Dong-Sing Wuu*, Sin-Liang Ou, Ching-Ho Tien, ”Slow electron making more efficient radiation emission,” Sci. Rep., 8, 4865 (2018).
  7. Ching-Ho Tien, Sin-Liang Ou, Yi OuYang, Chien-Ming Chen, and Dong-Sing Wuu*, “A low-temperature external electron retarding electrode for improving vertical green LED performance,” IEEE Trans. Electron Devices, 64 (8), 3219-3225 (2017).
  8. Ping -Chen Wu, Sin-Liang Ou, Ray-Hua Horng, and Dong-Sing Wuu*, “Enhanced light extraction of high-voltage light emitting diodes using a sidewall chamfer structure,” IEEE Photonics Journal, 9(3), 8201409 (2017).
  9. Ping-Chen Wu, Sin-Liang Ou, Ray-Hua Horng, and Dong-Sing Wuu*, “Improved performance of high-voltage vertical GaN LEDs via modification of micro-cell geometry,” Appl. Sci., 7, 506 (2017).
  10. Ching-Ho Tien, Chen-Hao Kuo, Dong-Sing Wuu*, Ray-Hua Horng, “Improved optoelectronic performance of high-voltage ultraviolet light-emitting diodes through electrode designs. IEEE Trans. Electron Devices, 64 (11), 4526-4531 (2017).
  11. Ching-Ho Tien, Shih-Hao Chuang, Huan-Min Lo, Stone Tasi, Chang-Lu Wu, Sin-Liang Ou, Dong-Sing Wuu*, “ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes,” Phys. Status Solidi A-Appl. Mat., 214 (3), 1600609 (2017).
  12. Ming-Chun Tseng, Dong-Sing Wuu, Chi-Lu Chen, Hsin-Ying Lee, Yu-Chang Lin, Ray-Hua Horng, “Enhanced light extraction in wafer-bonded p-side-up thin-film AlGaInP light emitting diodes via zinc oxide nanorods,” Opt. Mater. Express, 10, 3293-3302 (2016).
  13. Hong-Ru Liu, Sin-Liang Ou, Shih-Yin Wang, and Dong-Sing Wuu*, “On the role of diluted magnetic cobalt-doped ZnO electrodes in efficiency improvement of InGaN light emitters,” Appl. Phys. Lett., 109(2), 021110-1~021110-5 (2016).
  14. Shih-Hao Chuang, Cheng-Sheng Tsung, Ching-Ho Chen, Sin-Liang Ou, Ray-Hua Horng, Cheng-Yi Lin, and Dong-Sing Wuu*, “Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications,” ACS Appl. Mater. Interfaces, 7(4), 2546-2553 (2015).